Modeling Depth Resolved XRF data to study Semiconductor-Oxide Thin Films doped with transition metals ions
نویسندگان
چکیده
Grazing Incidence X-Ray Fluorescence (GI-XRF) technique is a powerful tool for the characterization of depth profile concentrations in multilayered samples. A modeling program called ANDEN has been developed for simulating GI-XRF data for layered thin films [1]. ANDEN was used as one of the tools to study the dependence of dopants distribution with magnetic behavior in Diluted Magnetic Semiconductors (DMS). These new kind of materials attract attention because of their potential applications in spintronics, once they showed ferromagnetic properties at room temperature [2]. Codoped TiO2 and SnO2 thin films were grown on Si, LaAlO3 (LAO) and SrTiO3 (STO) substrates using both DC/RF Sputtering and Pulsed Laser Deposition (PLD). Combined GI-XRF and X-ray Reflectivity (XRR) were used to study cobalt depth profile within the films. In addition, magnetic properties of these films were also studied using complementary techniques such as superconducting quantum interference device (SQUID) and X-ray Magnetic Circular Dichroism (XMCD). GIXRF, XRR and XMCD measurements were performed at the Brazilian Synchrotron Light Laboratory in Campinas, Brazil. In this work, an overall description of the ANDEN program as well as the main results about the behavior of Co in semiconductor oxide thin film, will be given.
منابع مشابه
Performance Evaluation of ZnO Based Rare Earth Element Doped Thin Films
In DMS materials, a small fraction of a host semiconductor cation is substituted by magnetic ions. We chose as semiconducting host the transparent ZnO, with a bandgap of 3.3 eV at room temperature. Studies on ZnO doped with 3d transition metals indicated only small magnetic moments. The more recent results for Gd in GaN, indicating high magnetic moments, motivated us to investigate ZnO thin fil...
متن کاملDoped Zinc Oxide Thin Films as Transparent Conductive Electrodes
Sn doped ZnO thin films have been deposited on c-cut sapphire single crystal substrates at 200°C by pulsed electron beam deposition. The kinetic energies of the ions in the plasma plume determined from ion probe measurements, present a relatively broad distribution of the energies from a few eV to one hundred eV. Sn doped ZnO films have a graded composition, with a slightly in-depth variation o...
متن کاملUnusual Electronic Transport and Magnetism in Titanium Oxide Based Semiconductors and Metals
Title of dissertation: UNUSUAL ELECTRONIC TRANSPORT AND MAGNETISM IN TITANIUM OXIDE BASED SEMICONDUCTORS AND METALS Shixiong Zhang, Doctor of Philosophy, 2007 Dissertation directed by: Professor T. Venky Venkatesan Department of Physics The main objective of this thesis was to explore the structural, electrical, magnetic and optical properties of titanium based novel oxide thin films, such as t...
متن کاملSynthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics
We report on growth and physical properties of vanadium dioxide (VO2) films on model conducting oxide underlayers (Nb-doped SrTiO3 and RuO2 buffered TiO2 single crystals). The VO2 films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The VO2 film grown on Nb doped SrTiO3 shows over two orders of magnitude metal–insulator transition, while VO2 film on RuO2 buff...
متن کامل